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A metastable alloy of carbon, germanium and tin, formed from well-defined stable molecular precursors. This material is predicted to have a direct bandgap and a lattice constant very close to that of silicon.

Clever chemists have determined how to transfer unusual stoichiometries and bond geometries from novel CVD precursor molecules into the solid state. We are applying these advances to the design of new semiconductors. Some of these new allows combine interesting optical properties with very desirable lattice structures. Others may enable the creation of semiconducting materials with very high doping levels. This work was featured in Nature magazine. A video presentation of this topic is available. Click on the video image to advance each frame.

Publications

2001 · 2002 · All
P. Zhang, V. H. Crespi, E. Chang, S. G. Louie and M. L. Cohen, "Theory of Metastable Group-IV Alloys Formed from CVD Precursors," Phys. Rev. B 64, 235201 (2002) Abstract/Comments
P. Zhang, V. H. Crespi, E. Chang, S. G. Louie and M. L. Cohen, "Computational Design of direct bandgap semiconductors that lattice match silicon," Nature 409, 69 – 71 (2001) Abstract/Comments

Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

V. H. Crespi : Metastable Semiconductor Alloys